a Horizon 2020 FET -Open project
Towards a SiGe nanolaser

Growth of Hexagonal SiGe

We grow Hex-SiGe by first growing wurtzite GaP nanowire. Subsequently, the hexagonal crystel structure is transferred into the Si or SiGe nanowire shell.
The growth has been published by Ikaros Hauge in Nano Letter.

-Hexagonal Silicon Realized, Nano Lett. 15, 5855 (2015)
-Single-Crystalline Hexagonal Silicon−Germanium, Nano Lett. 17, 85-90 (2017)
-Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes, Nano Lett 18, 7856-7862 (2018)